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IRFD120 Real Image
Same model may have multiple batches, images only for reference.

IRFD120

Part No IRFD120
Manufacturer Vishay
Catalog FETs - Single
Description 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET | MOSFET N-CH 100V 1.3A 4-DIP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 1.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 270mOhm at 780mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187560-IRFD120
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFD120 CAD Model

Description

The Vishay Siliconix IRFD120 is an N-Channel MOSFET transistor that features a 100V drain-source breakdown voltage and a continuous drain current of 1.3A.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 1.3A
  • Maximum Rds On: 270mOhm @ 780mA
  • Gate-Source Voltage: ±20V
  • Power Dissipation: 1.3W
  • Package: 4-DIP
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
31+ $1.6508 $51.1748
65+ $1.5463 $100.5095
101+ $1.4941 $150.9041
144+ $1.3896 $200.1024
187+ $1.3374 $250.0938
234+ $1.2851 $300.7134
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 31 pcs
Order Increment : 1 pcs
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