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2SK1830(TE85L)

Part No 2SK1830(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH Si 20V 0.05A 3-Pin SSM T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159172-2SK1830(TE85L)
Popularity Low
Supply and Demand Status Limited
Family Name 2SK1830
Introduction Date March 25, 1998
ECCN EAR99
Country of Origin Japan, Thailand
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK1830(TE85L) CAD Model

Description

Overview

The 2SK1830(TE85L) from Toshiba Semiconductor and Storage is an N-channel junction field-effect transistor (JFET) supplied in a tape-and-reel “TE85L” packaging format for automated SMD assembly. JFETs like the 2SK1830 are typically used as low-noise, high-input-impedance devices in analog front ends, small-signal amplification, switching, and buffering stages. This device is suitable for operation in low-voltage signal paths and precision analog circuitry where gate leakage and noise performance are important. For exact ratings such as VDS max, ID, power dissipation, and package outline, designers should refer to the official Toshiba datasheet for the 2SK1830 series.

Applications

  • Low-noise preamplifiers for audio, sensor, or instrumentation inputs
  • High-input-impedance buffer stages in measurement and data acquisition systems
  • Analog switching and signal routing in low-level RF or IF stages
  • AGC (automatic gain control) or variable attenuator circuits in communication equipment
  • Sensor interface and front-end conditioning in industrial and building automation
  • General-purpose small-signal amplification in consumer and professional electronics

Alternatives & Replacement

Depending on availability, lifecycle status, or specific performance requirements, it may be necessary to consider alternative JFETs with comparable voltage, current, noise, and package characteristics.

Recommended alternatives:

  • Toshiba 2SJ378 – JFET, same manufacturer; redesign required, review polarity and operating conditions
  • Toshiba 2SK2035(TE85L,F) – N‑channel JFET; redesign required, check biasing and package details
  • Toshiba 2SK209-Y(TE85L) – N‑channel JFET; redesign required, verify transconductance and Idss ranges
  • ON Semiconductor MMBFJ177LT1G – JFET; redesign required, confirm polarity and application fit
  • Renesas 2SK1824-T1-A – N‑channel JFET; redesign required, compare maximum ratings and noise
  • Panasonic 2SK3938G0LBF – N‑channel JFET; redesign required, validate pinout, bias, and gain

Engineering note: All listed alternatives are not drop-in replacements. Before substituting, carefully compare the datasheets for pin configuration, polarity (N vs P channel), maximum voltages and currents, gate capacitance, transconductance, noise characteristics, and thermal limits. Prototype and bench-verify the behavior in your target circuit to ensure stable biasing, correct timing, and reliable long-term operation.

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