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PMEG3030EP,115

Part No PMEG3030EP,115
Manufacturer NXP / Nexperia
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 30V 3A SOD128
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 30V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 360mV @ 3A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 5mA @ 30V
Capacitance @ Vr, F 470pF @ 1V, 1MHz
Mounting SMD (SMT)
Case / Package CFP5
Operating Temperature - Junction 150°C (Max)
Win Source Part Number 128902-PMEG3030EP,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMEG3030EP,115 CAD Model

Description

NXP PMEG3030EP,115 Schottky Barrier Rectifier Diode

The NXP PMEG3030EP,115 is a highly efficient, low power loss Schottky barrier rectifier diode designed to meet the needs of a wide range of electronic applications. This surface-mounted diode is a part of NXP's portfolio of energy-saving, high-performance components that cater to the increasing demand for power efficiency in modern electronic circuits.

With its compact SOD-128 package, the PMEG3030EP,115 is optimized for automated manufacturing processes, making it an ideal choice for high-density circuit designs. It boasts a reverse voltage of 30V and a forward current of 3A, ensuring that it can handle moderate power requirements with ease. The low forward voltage drop characteristic of Schottky diodes is well-represented in this component, which minimizes energy loss during conduction and enhances overall circuit efficiency.

One of the key features of the PMEG3030EP,115 is its low reverse leakage current, which reduces power consumption when the diode is in the blocking state. This characteristic is particularly beneficial in battery-powered devices, where energy conservation is critical. Additionally, the fast switching capability of this diode makes it suitable for high-frequency applications, contributing to reduced switching losses and improved performance in power supply circuits.

The robust construction of the NXP PMEG3030EP,115 ensures that it can withstand the thermal and mechanical stresses commonly encountered in electronic devices. It has a wide operating temperature range, which allows it to perform reliably in various environmental conditions. The diode is also characterized by its low thermal resistance, enabling efficient heat dissipation and contributing to the longevity of the device.

Applications for the PMEG3030EP,115 include polarity protection, low voltage rectification, and freewheeling in a variety of electronic products such as portable devices, power management systems, and automotive modules. Its combination of efficiency, reliability, and compact form factor makes it a versatile component for designers looking to optimize their power circuits without compromising on space or performance.

In summary, the NXP PMEG3030EP,115 Schottky barrier rectifier diode is a high-quality, energy-efficient solution for modern electronic designs that require compact, high-performance power components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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