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BC847QASZ Real Image
Same model may have multiple batches, images only for reference.

BC847QASZ

Part No BC847QASZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A DFN1010B-6 / Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6
Datasheet
BC847QASZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 350mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Case / Package 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
Base Product Number BC847
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number 568-12527-2,1727-2244-6,568-12527-6,568-12527-2-ND,568-12527-1-ND,1727-2244-2,934068722147,1727-2244-1,568-12527-6-ND,568-12527-1
Standard Package 5,000
Win Source Part Number 1325638-BC847QASZ
Ultra Librarian 3D Model Ultra Librarian BC847QASZ CAD Model

Description

The BC847QASZ is a dual NPN bipolar transistor array manufactured by Nexperia USA Inc.

  • Maximum Power: 350mW
  • Voltage Collector Emitter Breakdown: 45V
  • DC Current Gain: 200 @ 2mA and 5V
  • Frequency Transition: 100MHz
  • Package: DFN1010B-6
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,565+ $0.0226 $57.9690
6,250+ $0.0185 $115.6250
9,680+ $0.0179 $173.2720
13,335+ $0.0173 $230.6955
17,245+ $0.0168 $289.7160
23,080+ $0.0150 $346.2000
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Availability: 13,888 pieces
MOQ: 2565 pcs
Order Increment : 1 pcs
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