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APT25GP120BDQ1G Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT25GP120BDQ1G

Part No APT25GP120BDQ1G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 69A 417W TO247
Datasheet
APT25GP120BDQ1G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 69A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 3.9V @ 15V, 25A
Maximum Power Dissipation 417W
Total Switching Energy(Ets) 500μJ (on), 440μJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 12ns/70ns
Testing Conditions 600V, 25A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 051446-APT25GP120BDQ1G
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT25GP120BDQ1G CAD Model

Description

APT25GP120BDQ1G High-Power IGBT Module

The APT25GP120BDQ1G is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-efficiency power applications. It combines the advantages of fast switching speed and low conduction loss.

  • Applications/Projects:
    • Industrial Motor Drives
    • Electric Vehicle Inverters
    • Solar Inverters
    • Welding Equipment
  • Features and Benefits:
    • High Efficiency: Optimized for reduced power loss.
    • Fast Switching: Supports high-speed operations in demanding setups.
    • Reliable Operation: Withstands harsh environments and high operating temperatures.
  • Additional Details:
    • Package Type: SOT-227
    • Voltage Rating: 1200V
    • Manufacturer: Advanced Power Technology

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11+ $29.6324 $325.9564
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Availability: 2,030 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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