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SI2301BDS-T1-E3

Part No SI2301BDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 2.2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 375pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028359-SI2301BDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Family Name Si2301BDS
Introduction Date November 08, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI2301BDS-T1-E3 CAD Model

Description

This SI2300DS MOSFET is a P-Channel polarity and manufactured by Vishay.

  • Power Dissipation (Max): 700mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.2A (Ta)
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 2.8A, 4.5V
  • Mounting: SMD (SMT)
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • EOL Date (Estimated): 2022

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1161 $50.5035
920+ $0.1088 $100.0960
1,430+ $0.1051 $150.2930
2,045+ $0.0978 $200.0010
2,660+ $0.0941 $250.3060
3,320+ $0.0904 $300.1280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 149,328 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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