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IRFD120PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD120PBF

Part No IRFD120PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.3A 4-DIP
Datasheet
IRFD120PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 270 mOhm @ 780mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 017590-IRFD120PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD120PBF CAD Model

Description

The IRFD120PBF is a N-Channel MOSFET transistor that is manufactured by Vishay.

  • Maximum Power Dissipation: 1.3W (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Popularity: high
  • Supply and Demand Status: balance
  • Application: commonly used in switching applications
  • Maximum Rds On @ Id,Vgs: 270 mOhm @ 780mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
31+ $1.6508 $51.1748
65+ $1.5463 $100.5095
101+ $1.4941 $150.9041
144+ $1.3896 $200.1024
187+ $1.3374 $250.0938
234+ $1.2851 $300.7134
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,280 pieces
MOQ: 31 pcs
Order Increment : 1 pcs
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