The SMMBTA56LT1G is a high-performance PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for use in a wide range of electronic applications. This transistor is characterized by its low V_CE(sat) and high current gain, making it an ideal choice for amplification and switching applications where efficiency is key.

Key Features

• Device Type: PNP Bipolar Junction Transistor
• Configuration: Single
• Collector-Base Voltage (V_CB): 80 V
• Collector-Emitter Voltage (V_CE): 80 V
• Emitter-Base Voltage (V_EB): 5 V
• Collector Current (I_C): 500 mA
• Power Dissipation (P_D): 225 mW
• DC Current Gain (h_FE): 100 to 250 at 10 mA, 5 V
• Operating Temperature Range: -55°C to +150°C
• Mounting Style: Surface Mount
• Package / Case: SOT-23-3
• RoHS: Compliant

Applications

The SMMBTA56LT1G is suitable for a variety of applications, including but not limited to:

• Power Management Circuits
• Signal Amplification
• Switching and Load Driving
• Linear Amplification and Active Filtering
• Consumer Electronics
• Telecommunication Systems
• Automotive Modules

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the SMMBTA56LT1G is no exception. This transistor is produced with high manufacturing standards, ensuring reliable performance in critical applications. It is also supported by ON Semiconductor's rigorous testing protocols, providing engineers with confidence in their designs.

Environmental Compliance

The SMMBTA56LT1G is a RoHS compliant component, adhering to the European Union's directive on the restriction of hazardous substances. This ensures that the transistor is free from lead, mercury, cadmium, and other harmful materials, making it suitable for use in environmentally-sensitive products.