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BFS17S H6327 Real Image
Same model may have multiple batches, images only for reference.

BFS17S H6327

Part No BFS17S H6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS RF NPN 15V 25MA SOT363
Datasheet
BFS17S H6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 1.4GHz
Noise Figure (dB Typ @ f) 3dB to 5dB @ 800MHz
Maximum Power Dissipation 280mW
Typical Gain (hFE) (Min) 40 @ 2mA, 1V
Maximum Current Collector 25mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 039639-BFS17S H6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BFS17S H6327 CAD Model

Description

BFS17S H6327 - SMD Medium Power NPN Transistor

The BFS17S H6327 is a surface-mount medium power NPN transistor, designed to provide efficient solutions for amplification needs in compact applications.

  • Features and Benefits:
    • Medium power handling capabilities.
    • Compact SMD package for space-saving designs.
    • Excellent thermal and electrical characteristics.
  • Applications:
    • Medium power amplification circuits.
    • High-frequency inverter circuits.
    • Power management systems.
  • Additional Details:
    • Maximum Collector Current: 100 mA.
    • Maximum Collector-Emitter Voltage: 45 V.
    • Package Type: SOT-23.

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