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BFR193FH6327XTSA1

Part No BFR193FH6327XTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS RF NPN 12V 80MA TSFP-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1dB to 1.6dB @ 900MHz to 1.8GHz
Gain 12.5dB
Maximum Power Dissipation 580mW
Typical Gain (hFE) (Min) 70 @ 30mA, 8V
Maximum Current Collector 80mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSFP-3
Win Source Part Number 099505-BFR193FH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFR193FH6327XTSA1 CAD Model

Description

BFR193FH6327XTSA1 - High Frequency NPN Transistor

The BFR193FH6327XTSA1 offers superior performance for RF applications requiring low noise and high linearity. It is a perfect choice for designers working on advanced RF systems.

  • Applications:
    • Wireless communications
    • Satellite technology
    • Microwave links
  • Features and Benefits:
    • Low noise performance
    • High linearity for distortion-free signal processing
    • Small footprint for compact designs
  • Additional Details:
    • Compatible with various PCB materials
    • Stable performance across a wide frequency range

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2764 $51.1340
445+ $0.2268 $100.9260
685+ $0.2198 $150.5630
945+ $0.2127 $201.0015
1,220+ $0.2056 $250.8320
1,630+ $0.1843 $300.4090
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,510 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
Expected Shipping Date
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