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BCR573E6327HTSA1

Part No BCR573E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.33W SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 70 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 150MHz
Maximum Power Dissipation 330mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022737-BCR573E6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR573E6327HTSA1 CAD Model

Description

The Infineon Technologies BCR573E6327HTSA1 is a PNP-pre-biased transistor designed for discrete semiconductor products.

  • Maximum Current Collector: 500mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 2.5mA, 50mA
  • Typical Gain (hFE) (Min): 70 @ 50mA, 5V
  • Maximum Power Dissipation: 330mW
  • Package: PG-SOT23-3
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5820 $52.3800
210+ $0.4776 $100.2960
325+ $0.4627 $150.3775
450+ $0.4477 $201.4650
580+ $0.4328 $251.0240
775+ $0.3880 $300.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,220 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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