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GD25LQ128EWIGR
Same model may have multiple batches, images only for reference.

GD25LQ128EWIGR

Part No GD25LQ128EWIGR
Manufacturer GigaDevice Semiconductor
Catalog Flash
Description 128MBIT NOR FLASH /1.8V /WSON8 6 / FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O 120 MHz 7 ns 8-WSON (5x6)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr GigaDevice Semiconductor (HK) Limited
Package Tape & Reel
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 128Mb (16M x 8)
Memory Interface SPI - Quad I/O
Clock Frequency 120 MHz
Write Cycle Time - Word, Page 60µs, 2.4ms
Access Time 7 ns
Voltage - Supply 1.65V ~ 2V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WSON (5x6)
Base Product Number GD25LQ128
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Other Names 1970-GD25LQ128EWIGRDKR,1970-GD25LQ128EWIGRTR,1970-GD25LQ128EWIGRCT
Standard Package 3,000
Win Source Part Number 968437-GD25LQ128EWIGR
Ultra Librarian 3D Model Ultra Librarian GD25LQ128EWIGR CAD Model

Description

The GigaDevice Semiconductor GD25LQ128EWIGR is a non-volatile memory integrated circuit that has a capacity of 128Mb (16M x 8).

  • Capacity: 128Mb (16M x 8)
  • Operating Voltage: 1.65V to 2V
  • Clock Frequency: 120 MHz
  • Write Cycle Time (Word): 60μs
  • Write Cycle Time (Page): 2.4ms
  • Operating Temperature Range: -40°C to 85°C
  • Memory Interface: SPI - Quad I/O
  • Package: Tape and Reel
  • ECCN: 3A991B1A
  • REACH: Unaffected
  • Manufacturer: GigaDevice Semiconductor

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145+ $1.0672 $154.7440
205+ $0.9926 $203.4830
265+ $0.9553 $253.1545
330+ $0.9180 $302.9400
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Availability: 100,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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