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MMDT3946-7-F

Part No MMDT3946-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz, 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 023914-MMDT3946-7-F
Family Name MMDT3946
Introduction Date October 12, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMDT3946-7-F CAD Model

Description

Overview

The MMDT3946-7-F from Diodes Incorporated is a dual transistor array in a compact surface-mount package, belonging to the “Transistors (BJT) - Arrays” category. It integrates two bipolar junction transistors (BJTs) in a single device, helping designers save board space and reduce component count in dense PCBs. This type of array is typically used for low-power signal switching, amplification, level shifting, and general-purpose interface tasks in digital and mixed-signal circuits. It is suitable for operation in standard low-voltage logic and analog circuits and is commonly supplied in a small SMD package optimized for automated assembly and reflow soldering. For detailed electrical limits such as VCEO, IC, gain (hFE), and transition frequency, refer to the official Diodes Incorporated datasheet.

Applications

  • General-purpose signal amplification stages in small-signal analog front ends
  • Low-power switching and buffering in MCU or FPGA-based digital boards
  • Level shifting between different logic voltage domains in embedded systems
  • Driver or pre-driver stages for LEDs, relays, or other low-current loads
  • Discrete transistor building blocks in consumer electronics and communication devices
  • Compact analog conditioning circuits in instrumentation and test equipment

Alternatives & Replacement

Depending on stock availability, lifecycle status, or specific electrical requirements, engineers may need to consider alternative transistor arrays or matched transistor pairs with comparable voltage, current, gain, and package characteristics. When selecting a substitute, key parameters such as polarity (NPN/PNP), maximum collector current, breakdown voltages, gain range, and package type should be carefully matched to the original design.

Recommended alternatives:

  • MBT3904DW1T1G – ON Semiconductor (Redesign Required)
  • PMBT3906 – NXP / Nexperia (Redesign Required)
  • PMBT3904 – NXP / Nexperia (Redesign Required)
  • BC856BDW1T1G – ON Semiconductor (Redesign Required)
  • DST3946DPJ-7 – Diodes Incorporated (Redesign Required)

Engineering note: Always verify pin configuration, polarity, package footprint, maximum ratings (voltage, current, power dissipation), and dynamic characteristics (gain, frequency response, switching speed) before using an alternative. Even if the basic specs appear similar, differences in pinout or package style can require PCB layout changes and requalification of the circuit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,260+ $0.0398 $50.1480
2,685+ $0.0373 $100.1505
4,160+ $0.0361 $150.1760
5,975+ $0.0335 $200.1625
7,740+ $0.0323 $250.0020
9,680+ $0.0310 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 168,760 pieces
MOQ: 1260 pcs
Order Increment : 1 pcs
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