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MMDT2222A-7-F

Part No MMDT2222A-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description Trans GP BJT NPN 40V 0.6A 200mW 6-Pin SOT-363 T/R / TRANS 2NPN 40V 0.6A SOT363
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 023907-MMDT2222A-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name MMDT2222A
Introduction Date October 12, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian MMDT2222A-7-F CAD Model

Description

Product Overview: MMDT2222A-7-F

The MMDT2222A-7-F is a high-performance, dual NPN transistor manufactured by Diodes Incorporated, designed to deliver efficient amplification and switching capabilities in a compact package. This versatile bipolar junction transistor (BJT) is a perfect solution for a wide range of electronic applications, from simple amplification tasks to more complex circuit designs requiring high-speed switching.

Key Features

  • Transistor Type: The MMDT2222A-7-F is a dual NPN transistor, which means it is composed of two NPN transistors within a single package, enabling designers to save space on PCBs.
  • Voltage and Current Ratings: With a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 600mA, this transistor can handle moderate power applications with ease.
  • High Transition Frequency: The device boasts a high transition frequency (fT) of 300MHz, making it suitable for high-speed switching applications.
  • Low Saturation Voltage: It features low collector-emitter saturation voltage, which minimizes power loss and improves efficiency during operation.
  • Power Dissipation: The MMDT2222A-7-F can dissipate up to 225mW, allowing it to manage a fair amount of power for its small size.
  • Package: Housed in a SOT-363 package, it is designed for surface mount technology, facilitating easy integration into modern PCB designs.

Applications

The MMDT2222A-7-F is suitable for a variety of applications, including:

  • Signal amplification in audio and communication devices
  • Driver stages in audio amplifiers
  • Switching loads in power management circuits
  • Digital logic circuits
  • Portable and consumer electronics

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the MMDT2222A-7-F is no exception. It is RoHS compliant, ensuring that it meets the latest environmental standards by avoiding the use of hazardous substances. The product also undergoes rigorous testing to ensure reliability and performance under various conditions.

In summary, the MMDT2222A-7-F from Diodes Incorporated is a reliable and versatile component that offers designers the flexibility and performance needed to create efficient and compact electronic solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
695+ $0.0721 $50.1095
1,690+ $0.0592 $100.0480
2,620+ $0.0573 $150.1260
3,605+ $0.0555 $200.0775
4,665+ $0.0536 $250.0440
6,240+ $0.0481 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 695 pcs
Order Increment : 1 pcs
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