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DMN3033LSDQ-13

Part No DMN3033LSDQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A
Maximum Rds On at Id,Vgs 20 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 725pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 139830-DMN3033LSDQ-13
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN3033LSDQ-13 CAD Model

Description

DMN3033LSDQ-13 - N-Channel Enhancement Mode Field Effect Transistor

The DMN3033LSDQ-13, manufactured by Diodes Incorporated, is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed for a wide range of applications. This power MOSFET is notable for its low on-resistance and high continuous drain current, making it an ideal choice for power management tasks in both commercial and industrial equipment.

Key Features

  • Low On-Resistance: The DMN3033LSDQ-13 boasts an extremely low on-resistance, which translates to reduced power loss and improved efficiency in operation. This characteristic is essential for applications that demand high efficiency and minimal heat generation.
  • High Continuous Drain Current: With a high continuous drain current, this MOSFET can handle significant power, making it suitable for high-current applications.
  • Advanced Technology: Utilizing the latest advancements in semiconductor technology, the DMN3033LSDQ-13 offers superior performance, which includes fast switching speeds and robust thermal characteristics.
  • RoHS Compliant: In line with environmental standards, this product is RoHS compliant, minimizing the use of hazardous substances in its construction.

Applications

The DMN3033LSDQ-13 is versatile and can be used in a variety of applications, such as:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches

Package and Reliability

Encased in a compact SO-8 package, the DMN3033LSDQ-13 is designed for space-constrained applications without compromising on power handling capabilities. Its package is optimized for efficient heat dissipation, ensuring reliable operation even under high power conditions. The device also features a robust structure that can withstand challenging operating environments.

Conclusion

The DMN3033LSDQ-13 from Diodes Incorporated represents a blend of efficiency, reliability, and performance. Whether you're designing power supplies, motor controls, or any other application requiring a high-performance N-channel MOSFET, the DMN3033LSDQ-13 offers the specifications and features necessary to meet the demands of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2845 $58.3225
495+ $0.2335 $115.5825
770+ $0.2261 $174.0970
1,060+ $0.2189 $232.0340
1,365+ $0.2116 $288.8340
1,830+ $0.1897 $347.1510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,100 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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