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DMMT3906W-7-F

Part No DMMT3906W-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 40V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual) Matched Pair
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 250MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 014400-DMMT3906W-7-F
Family Name DMMT3906W
Introduction Date June 24, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMMT3906W-7-F CAD Model

Description

Diodes Incorporated DMMT3906W-7-F Dual PNP Transistor

The DMMT3906W-7-F from Diodes Incorporated is a high-performance, dual PNP transistor designed for a variety of applications that require small signal amplification and switching. This component is part of Diodes Incorporated's extensive portfolio of semiconductor products, known for their reliability and precision. The DMMT3906W-7-F is housed in a compact SOT-363 package, making it ideal for space-constrained applications.

This dual PNP transistor offers a collector-emitter voltage (Vceo) of -40V and a collector current (Ic) of -200mA, which ensures efficient operation in a range of electronic circuits. The device features a continuous collector current of -200mA and a power dissipation of 300mW, allowing it to handle moderate power applications with ease.

The DMMT3906W-7-F boasts a high gain bandwidth product (fT) of 250MHz, providing excellent frequency response for amplification purposes. This characteristic makes it suitable for RF and high-speed signal processing applications where bandwidth is a critical factor.

With its integrated dual transistor configuration, the DMMT3906W-7-F saves valuable board space and reduces component count, which can lead to cost savings in mass production. The device's matched pair of transistors also simplifies designs by providing better thermal tracking and performance consistency.

Furthermore, the DMMT3906W-7-F offers a low saturation voltage, which minimizes power loss and improves efficiency, particularly in low-voltage applications. The device is also characterized by its low noise figure, which is essential for high-fidelity audio amplifiers and sensitive signal processing circuits.

Diodes Incorporated ensures that the DMMT3906W-7-F meets stringent quality and performance standards, making it a reliable choice for designers and engineers. Whether you're working on consumer electronics, industrial control systems, or medical devices, this dual PNP transistor is an excellent building block for your circuit designs.

In summary, the DMMT3906W-7-F is a versatile and efficient solution for designers looking to implement dual PNP transistors in their electronic projects. Its small form factor, combined with its high performance and reliability, makes it an invaluable component in the semiconductor industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
625+ $0.0805 $50.3125
1,330+ $0.0754 $100.2820
2,060+ $0.0729 $150.1740
2,950+ $0.0678 $200.0100
3,835+ $0.0652 $250.0420
4,785+ $0.0627 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70,519 pieces
MOQ: 625 pcs
Order Increment : 1 pcs
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