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DDTD142JU-7-F

Part No DDTD142JU-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 470
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 56 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323
Win Source Part Number 1032785-DDTD142JU-7-F
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Industrial, Power Management, Consumer Electronics, Portable Devices
Ultra Librarian 3D Model Ultra Librarian DDTD142JU-7-F CAD Model

Description

The DDTD142JU-7-F is a high-performance, surface-mount PNP transistor from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This device is designed to offer a compact and efficient solution for a wide range of electronic applications. The transistor is housed in an ultra-small SOT-323 package, making it ideal for space-constrained applications.

Key Features

  • Low VCE(sat): The DDTD142JU-7-F boasts a low collector-emitter saturation voltage, which enhances the overall efficiency of the device by reducing power loss during operation.
  • High Current Gain: With a high current gain (hFE), this transistor is capable of amplifying electrical signals effectively, making it suitable for amplification applications.
  • Complementary NPN Type Available: For design flexibility, a complementary NPN type transistor is available, allowing for the implementation of push-pull configurations and other circuit designs that require both PNP and NPN transistors.
  • RoHS Compliant: The DDTD142JU-7-F meets the requirements of the RoHS directive, making it suitable for use in environmentally sensitive applications.

Applications

The versatile nature of the DDTD142JU-7-F makes it suitable for a variety of applications, including but not limited to:

  • Power Management Circuits
  • Signal Amplification
  • Switching Applications
  • Consumer Electronics
  • Telecommunications
  • Computing Devices

Reliability and Performance

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DDTD142JU-7-F is manufactured using state-of-the-art processes, ensuring consistent performance and durability. It is designed to withstand the demanding conditions of commercial and industrial environments, providing a reliable solution for designers and engineers.

Conclusion

The DDTD142JU-7-F PNP transistor from Diodes Incorporated is a testament to the company's dedication to innovation and quality. Its compact form factor, low power consumption, and high current gain make it an excellent choice for a multitude of electronic applications. The availability of a complementary NPN type further enhances its versatility, making it a valuable component in any electronic component inventory.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,165+ $0.0430 $50.0950
2,835+ $0.0353 $100.0755
4,390+ $0.0342 $150.1380
6,045+ $0.0331 $200.0895
7,815+ $0.0320 $250.0800
10,455+ $0.0287 $300.0585
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,369 pieces
MOQ: 1165 pcs
Order Increment : 1 pcs
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