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BC847PN-7-F

Part No BC847PN-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 45V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V / 220 @ 2mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz, 200MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 011128-BC847PN-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC847PN-7-F CAD Model

Description

The BC847PN-7-F is a high-quality bipolar (BJT) transistor product from Diodes Incorporated, known for its reliability and efficiency in various electronic applications. This small-signal transistor is a versatile component designed for use in general-purpose amplification and switching applications.

Key Features:

  • Type: NPN/PNP Bipolar Transistor (BJT)
  • Package: SOT-363, a compact surface-mount package that is suitable for automated assembly processes and space-constrained applications.
  • Configuration: Dual, with one NPN and one PNP transistor in a single package, offering design flexibility and saving board space.
  • Collector-Emitter Voltage (VCEO): 45V for NPN and PNP, providing a good voltage rating for a range of applications.
  • Collector Current (IC): Up to 100mA, allowing for sufficient current handling capability for small-signal tasks.
  • DC Current Gain (hFE): High hFE at 200-400 for the NPN and 160-320 for the PNP, ensuring excellent current amplification.
  • Transition Frequency (fT): 100MHz for NPN and 250MHz for PNP, enabling fast switching and amplification in high-frequency circuits.
  • Power Dissipation (Pd): 250mW, providing a good balance between power handling and compactness.
  • RoHS Compliant: Yes, ensuring environmental and regulatory compliance for global use.

Applications:

The BC847PN-7-F transistor is suitable for a wide range of applications, including but not limited to:

  • General-purpose switching and amplification
  • Audio amplifiers
  • Signal processing
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems
  • Portable and consumer electronics

Quality and Reliability:

Diodes Incorporated is committed to providing high-quality and reliable components. The BC847PN-7-F is built to stringent quality control standards, ensuring consistent performance and durability for professional, industrial, and hobbyist applications alike.

Overall, the BC847PN-7-F from Diodes Incorporated is a versatile and reliable choice for designers and engineers looking for a dual NPN/PNP transistor solution that combines performance with compact packaging.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,070+ $0.0469 $50.1830
2,280+ $0.0439 $100.0920
3,540+ $0.0424 $150.0960
5,065+ $0.0395 $200.0675
6,580+ $0.0380 $250.0400
8,220+ $0.0365 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 93,000 pieces
MOQ: 1070 pcs
Order Increment : 1 pcs
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